Advances in the research of SiC MOSFET
ZHOU Ran
FENG Song
WU Jianyang
ZENG Yuling
HE Xinyi
LI Haojie
GUO Shaokai
HOU Linjun
OU Yangjie
HUO Wenbo
Abstract：Compared with traditional Si MOSFETs,the third-generation power semiconductor devices led by SiC MOSFETs are experiencing rapid development.Due to their lower cost,higher bandgap width,higher breakdown voltage,and lower conduction resistance,they are widely used in the integrated circuit industry and other fields.This article summarizes the current research progress of SiC MOSFETs at home and abroad from different materials and structures,analyzes the advantages and disadvantages of 3C SiC,4H SiC,and 6H SiC materials in the preparation of SiC MOSFETs,and compares the device performance parameters of SiC MOSFETs with groove epitaxial and groove injection structures.Summary of the characteristics of different materials in SiC MOSFET,comparison of the advantages and disadvantages of different structures,This provides research ideas for further developing SiC MOSFETs with higher breakdown voltage and higher performance in the future.With the continuous deepening of research and technological progress,the working environment of SiC MOSFETs is no longer limited to existing conditions,but it is applied in more fields.
Keywords：semiconductorpower devicesMOSFETsilicon carbide4H-SiC
Publication Date：2024-09-15
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：11( 230-240 )