A study on defect formation and magnetic properties of GaN nanowires
WANG Yu-peng
Abstract：The defect formation energies and magnetic properties in Co doped GaN nanowires are investiga-ted by the first principle. The formation energies of Co impurities are analyzed. It is found that Co prefers to oc-cupy surface Ga site of nanowires. Ferromagnetic ( FM) and antiferromagnetic ( AFM) coupling between Co at-oms are also investigated by 8 different configurations. The results show Co doped GaN nanowires exhibit ferro-magnetic stability under ground states.
Keywords：the first principlessemiconductormagnetic propertiesdefect
Publication Date：2016-01-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：5( 135-139 )