Research on transient short-circuit failure analysis and finite element thermoelectric coupling model of IGBT
DOU Zhifeng
JIN Yuxiang
GUO Xinfei
Abstract：Aiming at the problem that the traditional thermal network model is not suitable for IGBT shortcircuit junction temperature measurement, based on the analysis of the failure mechanism of IGBT in the case of transient short-circuit, the energy value of IGBT short-circuit failure was defined. The evolution law of the critical energy value of IGBT under different initial temperature and different bus voltage was found, and finite element thermoelectric coupling model was established. The simulation results showed that with the increase of DC bus voltage, initial temperature and current density, the short-circuit maintenance time and critical energy value of IGBT would be greatly reduced while the critical temperature point of IGBT failure was independent of the initial temperature; the heat transfer before IGBT failure only reached the solder layer during the shortcircuit process, and the maximum temperature point of IGBT was distributed at the boundary of the depleted layer at the instant of short-circuit.
Keywords：insulated gate bipolar transistor(IGBT)transient short-circuit junction temperature meaurementcritical energyfinite element thermoelectric coupling model
Publication Date：2018-11-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：8( 101-108 )