Research on preparation and performance of Gallium nitride powder with preferred orientation
KANG Li-ping
WANG Ling-li
WANG Hai-yan
ZHANG Xiao-dong
WANG Yong-qiang
Abstract：The hexagonal wurtzite Gallium nitride (GaN) was prepared by calciningβ gallium oxide(β-Ga2O3)in flowing ammonia.The XRD,SEM and TEM were employed to investigate the structure and morphology.The photoluminescence (PL) spectroscopy was used to collect photoluminescence spectroscopy of GaN perform the luminous property.The measurement results revealed that the obtained GaN had preferred orientation of (002),and the rod shape and grain size of GaN powders were similar to those of raw gallium oxide which were agglomerates of tens nanometers flake crystallites.The near-edge emission at 346 nm (3.584 eV) of Gallium nitride powders had a blue shift of 19 nm(187 meV) than that of bulk GaN material.
Keywords：Ⅲ-Ⅴ semiconductorGallium nitride powderpreferred orientationluminescence performanceblue shift
Publication Date：2017-09-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：7( 42-48 )