Research on short-circuit junction temperature measurement method of IGBT field failure
DOU Zhi-feng
ZHAI Chao-wei
CUI Guang-zhao
JIN Nan
Abstract：To overcome the problems of slow response speed and uneven thermal conductivity caused by the heterogeneity structure which exits in recent junction temperature measurements,a thermoelectric model based on heat accumulation was proposed to accurately measure the IGBT junction temperature in real time,based on the study of IGBT failure mechanism and the existing junction temperature measurement models.The IGBT temperature measurement was converted to measure the temperature of a certain point of the IGBT based on the energy balance to avoid the heterogeneity structure problem of IGBT.Matlab simulation and experimental results showed that the two temperature curves have a good degree of fit, verified the feasibility of the proposed method.
Keywords：short circuit failureIGBT field failurejunction temperatureheat accumulation thermoelectric model
Publication Date：2017-01-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：8( 73-80 )