Preparation and characterization of La2 Hf2 O7 gate dielectric films
LI Jun-yu
ZHANG Huan-jun
Abstract：La2 Hf2 O7 gate dielectric films with high dielectric constants have been grown on silicon (1 00)sub-strates by pulsed laser deposition.The structure of the films and the interface layer were studied by using X-ray diffraction (XRD),synchrotron X-ray reflectivity (XRR),and X-ray photoelectron spectroscopy (XPS). X-ray diffraction demonstrated that the as-grown films were amorphous and crystallized into La2 Hf2 O7 thin films after 1 000 ℃ annealing.Silicon oxide and silicate interlayer were observed between the Si substrate and as-grown film.The composition and thickness of the interlayer greatly depended on the grown condition,and annealing could effectively eliminate SiOx formation and improve the dielectric property of La2 Hf2 O7 gate die-lectric films.
Keywords：pulsed laser deposition technologyLa2 Hf2 O7 gate dielectric filmdie-lectric property
Publication Date：2016-01-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：5( 104-108 )