Experimental Study on the EOS Resistance and Optimization Strategies of Near-Ultraviolet LED
GUAN Zhibin
ZHANG Xianmin
HU Yi
Abstract：NUV LEDs exhibit relatively low robustness against electrical overstress(EOS).To investigate this issue,an EOS testing platform was constructed using a surge generator,and the effects of chip size,series resistance,and different circuit topology on EOS tolerance were examined.The results reveal that,unlike electrostatic discharge(ESD)where reverse breakdown is predominant,EOS damage in NUV LED mainly manifests as forward over-current degradation.Increasing the chip size,incorporating series resistors for voltage sharing,and adopting a"parallel-first-then-series"connection configuration all effectively enhance EOS robustness.Based on these findings,general protection guidelines are proposed:for large-area chips(side length≥36 mil),the application of series resistors is recommended,whereas for small-area chips(≤20 mil),devices should adopt a parallel-then-series configuration.This approach can improve EOS withstand capability by more than 50%.
Keywords：NUV LEDEOScircuit topologyresistancechip size
Publication Date：2025-12-25
Online Publishing Date：2026-01-08(First online date of this platform, not the publication date of the document)
Pages：4( 67-69,154 )