Investigation on the V-Pit Effect and Luminous Properties of GaN-Based LEDs
ZHENG Xi
DAI Yurong
FU Yi
HUANG Tao
ZHOU Mingbing
LÜ Yijun
GUO Weijie
CHEN Zhong
Abstract：As an important component of the new generation of display technology,micro-light-emitting diodes(Micro-LEDs)display is widely regarded as one of the display solutions with the greatest development potential in the future due to its advantages such as high brightness,ultra-small pixel size,high contrast and long lifespan.To achieve efficient monolithic integration of full-color Micro-LEDs,this study employed Si(111)substrates to grow GaN-based red,green,and blue LED epitaxial structures with varying indium compositions.The distribution of V-pits and their influence on the luminous performance were systematically investigated.As the indium-content in the active region increased,the V-pit density increased while the pit size decreased,and their morphological evolution was found to be closely related to the growth temperature.Temperature-dependent photoluminescence(PL)measurements were further conducted to analyze the carrier localization characteristics and thermal activation behaviors.The fitting results based on the proposed modified Arrhenius model revealed strong carrier localization in the red epitaxial sample,with a corresponding localization activation energy of 18.5 meV,indicating that as the indium component increases,the carrier localization effect of the sample becomes more significant.The estimated relative internal quantum efficiency(IQE)was 3.8%for red,10.9%for green,and 27.3%for blue LEDs,respectively.This work provides theoretical support and experimental reference for the optimization of GaN-based full-color LED epitaxial structures on silicon substrates.
Keywords：light emitting-diodeV-pitsilicon substratecarrier localization
Publication Date：2025-12-25
Online Publishing Date：2026-01-08(First online date of this platform, not the publication date of the document)
Pages：5( 1-5 )