Effect of low temperature buffer layer of GaN films deposited on diamond substrate
ZHANG Dong
ZHAO Yan
SONG Shiwei
LI Yucai
WANG Jian
BI Xiaoguo
Abstract：GaN films were deposited on freestanding diamond substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) technique with various buffer layer deposition temperature.The effect of buffer layer deposition temperature on the quality of GaN flim was studied using reflection high energy electron diffraction (RHEED),X-ray diffraction (XRD) and atomic force microscope (AFM).The results show that GaN film deposited with buffer layer is very important,and as-grown GaN films is of high c-axis preferred orientation and highly crystallined with the buffer layer temperature deposited at 100 ℃,and the GaN rims have the smooth surface.
Keywords：ECR-PEMOCVD systemGaN filmsfreestanding diamond substratebuffer layer deposition temperature
Publication Date：2017-01-01
Online Publishing Date：2026-05-22(First online date of this platform, not the publication date of the document)
Pages：4( 78-81 )