The Effect of NH3 Anneal on the Photoluminescence Properties of ZnO Nanowires Array
Abstract：The ZnO nanowires were prepared on Si （100） substrate by hydrothermal technology. Prior to the growth of nanowires, thin ZnO seed layer was prepared on the surface of Si substrate by coating. Then, oriented ZnO nanowires were grown on the seed layer through hydrothermal method. The ZnO nanowires were annealed in NH3 at different temperatures. The effect of anneal on their photoluminescence （PL） properties were systematically studied. N acceptor-related emissions appeared in low-temperature PL spectra. The ionization energy of N acceptor was determined as 129 meV from free-electron-to-acceptor （FA） transition. In addition, donor-acceptor pair （DAP） emission showed a slight redshift with increasing annealing temperature. An obvious free-exiton （FE） emission was observed in the PL spectra of ZnO nanowires annealed at 700℃. This phenomenon was proved with theory fitting.
Keywords：ZnO nanowireNH3 annealphotoluminescence
Publication Date：2012-01-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：5( 5-9 )