Surface shear stress of intracranial aneurysm stent based on CT data

Wei He; Muhetaer Kelimu; Liu Xiao-yue

doi:10.3969/j.issn.2095-4344.2016.21.018

Abstract：BACKGROUND:Numerical stimulation technology is a good method to analyze blood flow changes after intracranial aneurysm stenting that oftenresult in restenosis. <br> OBJECTIVE:To explore the hemodynamic effect of stent implantation on patient-specific intracranial aneurysm and the distribution of the wal shear stress on the stent surface. <br> METHODS:Brain CT data from a patient with intracranial aneurysm were extracted and optimized to establish a patient-specific intracranial aneurysm materialization model. Meanwhile, a three-dimensional model of rectangular section spiral stent was designed to develop an aneurysm model with the stent by the method of boolean operation. Then, the possibility of restenosis was analyzed based on the distribution of wal shear stress on the surface of stent model. <br> RESULTS AND CONCLUSION:The wal shear stress on the stent surface which was more than 40 Pa increasedalong with the increase of blood velocity and blood viscosity at the same moment. However, the wal shear stress on the stent surface which was less than 0.5 Pa decreased along with the increase of blood viscosity, and its distribution was the largest when the blood velocity was 0. This stent provides a new insight into the controling of the aneurysm growth and rupture, but the restenosis area is too large. In order to prevent restenosis, the stent need to be optimized or reselected to keep the desired shear stress values of 0.5 to 40 Pa, and meanwhile to minimize the pulsating change of wal shear stress during a cardiac cycle.