Crystallization and electrical properties of Pb(Zr40Ti60)O3/Nb∶SrTiO3 in microwave magnetic field
WANG Zhanjie
WANG Xuenan
GAO Yige
BAI Yu
Abstract：[Objective]Ferroelectric films with lead zirconate titanate as a typical perovskite phase are widely used in ferroelectric memories,film capacitors,and microelectromechanical systems due to their excellent comprehensive electrical properties.The electrical performance of PZT ferroelectric films is a crucial factor in the design and manufacturing of devices,directly influencing their service life.Another issue that cannot be ignored is how to prepare high-performance PZT films efficiently.Therefore,in the pursuit of efficient preparation of PZT films,it is necessary to consider factors influencing their electrical performance for meeting the performance requirements of different devices.Micro wave annealing can effectively reduce the heating temperature or heating time during the preparation process of ferroelectric films,which is commonly applied in efficiently preparing high-performance PZT ferroelectric films.During the microwave annealing process,the selection and characteristics of the substrate materials can significantly influence the performance of the films and therefore need to be studied in depth.[Methods]To effectively utilize microwave annealing to synthesize functional films,this study investigated the heating behavior of Nb-doped SrTiO3(Nb∶SrTiO3)single crystal substrates with different Nb doping amounts in microwave magnetic field and explored the interaction between microwave and materials.Afterward,amorphous Pb(Zr40Ti60)O3(PZT)films were deposited on these Nb∶SrTiO3 substrates by a sol-gel method,which were then crystallized by microwave annealing.The study also investigated the effects of micro wave annealing on the microstructure and electrical properties of PZT films.[Results]The results indicate that the heating behavior of the Nb∶SrTiO3 substrate depends on factors such as its conductivity,skin depth,and thickness.For the single crystal substrate with relatively high conductivity,its heating temperature can be ensured by regulating microwave output power.As the Nb doping amount in Nb∶SrTiO3 substrates increases,the heating temperature and heating rate of the substrates in the microwave magnetic field gradually decrease.Considering the effects of skin depth and thickness,the substrate with the Nb mass fraction of 0.05％exhibits the best heating behavior in the micro wave magnetic field.Microwaves directly interact with the charged defects within the material,reducing the internal defects of the PZT film and thereby achieving rapid crystallization of the PZT film.Meanwhile,the pinning effect of the film on the ferroelectric domains is weakened,which makes the PZT film show a saturated P-E hysteresis loop and thus further improves the polarization intensity of the PZT film.[Conclusion]Microwave annealing can crystallize ferroelectric films into a perovskite phase in a short time,realizing the rapid preparation of PZT films at high temperatures and improving the electrical properties of PZT films.Additionally,this effect is more obvious with the increase in microwave power.
Keywords：microwave annealingNb∶SrTiO3 substrateheating behaviorPb(ZrTi)O3 filmconductivityskin depthmicrowave powerferroelectric property
Publication Date：2025-05-25
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：8( 324-331 )