Effect of Al2O3 layer thickness on energy storage performances of PbZrO3/Al2O3 heterostructure thin films
WANG Zhanjie
YU Haiyi
SHAO Yan
WANG Ziquan
BAI Yu
Abstract：In order to improve the energy storage density of Pt/PbZrO3/Pt dielectric capacitors,PbZrO3/Al2O3 heterostructure thin films were prepared on the Pt/Ti/SiO2/Si substrate,where the Al2O3 layers with a thickness from 0 nm to 10 nm were deposited by thermal evaporation and natural oxidation methods.PbZrO3 films were prepared by a chemical solution deposition method,and the effect of Al2O3 layer thickness on the energy storage performances of PbZrO3/Al2O3(PZO/AO)heterostructure thin films was studied.The results show that the electrical breakdown strength of PZO/AO gradually increases with the AO layer thickness,and the characteristics of polarization versus electric field(P-E)hysteresis loop changes from antiferroelectric form to ferroelectric form.The maximum energy storage density of 21.2 J/cm3 can be achieved when the thickness of AO layer is 5 nm.
Keywords：dielectric capacitorPbZrO3 thin filmAl2O3 insert layerferroelectricityantiferroelectricityenergy storage performancethermal evaporationchemical solution deposition method
Publication Date：2024-01-25
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：5( 72-76 )