The Fabrication and Characteristics of Si based Al/ZnO/Ag Schottky Barrier Diode
QIN Hai-ying
WANG Ting
SONG Ying-xin
SONG Chuan-li
Abstract：ZnO thin film is prepared by RF magnetron sputtering and high temperature annealing process on the substate of Si . By analying the structure characteristics of ZnO thin film, the result shows that ZnO thin film is C-axis oriented using X-ray diffraction and the surface of sample is clean and smooth using scanning electron microscopy. It is prepared Al/ZnO/Ag Schottky diode under the conditions of the technology in prepareing ZnO thin film. The device is tested at room temperature .The result shows that schottky contact is formed between Ag and ZnO, Al/ZnO/Ag schottky diode has a significantly light respon.
Keywords：Al/ZnO/Ag schottky barrier diodePreparationElectro-optical properties
Publication Date：2013-01-01
Online Publishing Date：2026-05-22(First online date of this platform, not the publication date of the document)
Pages：4( 55-58 )