Localization and Polarization Effects in Near-Ultraviolet GaN-Based Quantum Well Structures
WU Zhibo
HE Longfei
WU Zonghao
XU Mingsheng
WANG Chengxin
XU Xiangang
JI Ziwu
Abstract：A near-ultraviolet InGaAlN multiple quantum well structure was epitaxially grown on an AlN template with a sapphire substrate,and its photoluminescence(PL)properties were measured.The meas-urement results show that the PL peak energy and linewidth respectively exhibit an S-shaped(decreasing-increasing-decreasing)and a W-shaped(narrowing-widening-narrowing-widening)temperature depend-ences,and an N-shaped(increasing-decreasing-increasing)and a V-shaped pattern(narrowing-widening)excitation power dependences.These behaviors show the localized characteristics,and Coulomb screening effect of quantum-confined Stark effect,of the carrier recombination in the structure.The former is as-cribed to potential fluctuations caused by fluctuations of well widths,while the latter is attributed to the well/barrier lattice mismatch-induced polarization field.Furthermore,the temperature dependence of the integrated PL intensity of the structure also confirms the inhomogeneity in the depths of the localized states in the wells.
Keywords：near-ultraviolet LEDGaN based multiple quantum wellphotoluminescencelocalization effectquantum-confined Stark effect
Publication Date：2025-04-27
Online Publishing Date：2026-08-28(First online date of this platform, not the publication date of the document)
Pages：6( 218-223 )