Ga2O3:Cr3+Multi-Center to Single-Center Emission and Spectral Tunable Realization
XIA Chenglong
CHEN Yuhui
ZENG Bingyang
YANG Jiahui
LI Ling
WANG Zhiguo
LIU Xiaoguang
Abstract：Near-infrared light(NIR)is widely used in agriculture,medicine,non-destructive testing and other fields.But most of the near-infrared light sources have the problems of low luminous efficiency and narrow half-height width.In order to solve these problems,a series of Cr3+doped NIR phosphors with β-Ga2O3 as the main substrate were prepared successfully by high temperature solid phase method at differ-ent temperatures.Ga2O3:Cr3+synthesized at 700 ℃ enables the peculiar wideband with two-center emis-sion from 350 to 800 nm.When the synthesis temperature rises from 800℃to 1 100℃,Ga2O3:Cr3+mainly shows wide-band emission in the near infrared region.Moreover,the emission spectrum of Ga2O3:Cr3+shows a blue shift from 770 nm to 730 nm with the increase of synthesis temperature.By replacing Ga3+with In3+,the spectral redshift of Ga2O3:Cr3+from 764 nm to 810 nm was achieved,and the half-height width of Ga3+was gradually increased after replacing Ga3+with Al3+.At the same time,the lattice occupation theory is used to show that doped Cr3+preferentially occupies the Ga2 lattice site with octahed-ron.
Keywords：photoluminescencenear-infrared luminescencespectral regulationsite occupation
Publication Date：2024-12-28
Online Publishing Date：2026-08-28(First online date of this platform, not the publication date of the document)
Pages：10( 29-38 )