Effects of the QW Thickness and QB Doping on Efficiency Attenuation Characteristics of High Power LED AlGaInP
LI Yu-qiang
LIU Chao
CHAI Yong-hao
NIU Ping-juan
YU Li-yuan
NING Ping-fan
Abstract：Currently, GaAs based AlGaInP LED (Light emitting diode) is an international frontier and hotspot in the field of optoelectronic devices, and its stability and luminous efficiency have been improved obviously with increasingly mature industrial preparation technology.However, the attenuation of the luminous efficiency is still a very serious question for AlGaInP high power chip at high current.The known factors of effect are mainly the carrier overflow and Auger recombination enhancement.Relationship between changes in photoluminescence spectra with current density and radiation efficiency have been analyzed by the different QW (quantum well) thickness and QB (quantum barrier) doping concentration for AlGaInP LED.The high temperature attenuation is improved obviously for QB doping concentration at 1×1017 cm-3 and 20 nm QW thickness.
Keywords：high powerAlGaInPLEDauger recombinationcarrier overflow
Publication Date：2018-10-01
Online Publishing Date：2026-08-28(First online date of this platform, not the publication date of the document)
Pages：5( 37-41 )