Modeling the dynamic on-resistance of enhancement-mode GaN device by fractional-order model

JIN Hong; CHEN Xi; ZHANG Yun-ning; ZHU Bin-xin; HUANG Yue-hua

doi:10.7641/CTA.2025.40187

Abstract：Enhancement-mode GaN devices exhibit electron trapping effects when subjected to high voltage stress be-tween the drain and source electrodes,affecting the device's dynamic on-state resistance.To accurately and concisely describe this phenomenon,a test platform with improved clamping circuit is proposed to carry out experimental measure-ments of the device.On the basis of which,a modeling and parameter identification method is proposed based on the fractional-order equivalent impedance model,which considers the association between the electron trapping effect in the device and the"long-tail distribution pattern"that changes with trapping time,along with the time-dependent"memory effect"related to fractional calculus operations.Research results demonstrate that the proposed improved measurement scheme can eliminate the influence of voltage spikes on measurement results encountered in traditional approaches.The proposed fractional-order equivalent impedance model can accurately characterize the variation pattern of the dynamic on-state resistance of enhanced GaN devices.The proposed model parameter variation pattern exhibits consistency,with the fractional order decreasing with an increase in bias voltage between the drain and source electrodes.This confirms that the proposed model can reflect the characteristics and parameter variation patterns of the device from a working mechanism perspective.