A review of growth process modeling and control of Czochralski silicon single crystal
LIU Ding
ZHAO Xiao-guo
ZHAO Yue
Abstract：Silicon single crystal is one of the most important materials of semiconductor. More than 90% of semi-conductor devices and integrated circuit chips are made of silicon single crystal. As the rapid development of integrated circuit technique, the quality of silicon single crystal is being concerned much more than before. Czochralski method is the main method of silicon single crystal production, therefore, its scientific principle and method, growth technique and technology, as well as control strategy and method have always been a hot research topic in both academia and industry. For growth process of electronic-grade silicon single crystal by Czochralski method, based on basic principle of crystal growth, this paper fully describes growth modeling, variables detection, control method, and so on. Especially for the demand of silicon single crystal with large size and high quality nowadays, the main research achievements and current problems are summarized. The research ideas and methods are put forward correspondingly.
Keywords：Czochralski silicon single crystalprocess modelingvariables detectionprocess controlcontrol strategy
Publication Date：2017-01-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：12( 1-12 )