A Study of Regulation of Electrical Properties of Ion-Gel Gated Indium Oxide Channel MOSFETs under Bending Conditions
GAO Ruiyi
LIU Chen
WANG Ruibo
ZHANG Yuming
YANG Xiaokuo
JIN Chenxing
SUN Jia
Abstract：With the increasement of making the needs of flexible electronics in wearable,ion-gel materials have attracted considerable attention due to their flexibility and conductivity.This study systematically in-vestigates the regulatory mechanism of bending stress on the performance of ion-gel-gated metal-oxide-semiconductor field-effect transistors(MOSFETs)by simulating tensile and compressive strains through concave and convex molds in combination with electrical characterization and COMSOL Multiphysics simula-tions.The experimental results demonstrate that when the bending radius reaches 28.5 mm,the device's on/off ratio decreases from 2 658 to 2 215,the saturation carrier mobility drops by 53％(from 16.1 cm2/(V·s)to 8.6 cm2/(V·s)),and the hysteresis window expands by 9.3％.The simulation results further reveal that when the Mises stress exceeds 100 MPa,bending stress not only degrades the on/off ratio,carrier mobility,and hysteresis window but also induces a positive threshold voltage shift via interface trap states and energy band modulation.Notably,tensile strain exhibits a more pronounced impact on device per-formance compared to the compressive strain.These findings provide critical technical insights for the op-timization of ion-gel-based flexible devices in wearable electronics and smart sensors.
Keywords：ion-gelbending strain influenceflexible electronics
Publication Date：2025-12-25
Online Publishing Date：2025-12-26(First online date of this platform, not the publication date of the document)
Pages：6( 45-49,64 )