Using the relationship forward voltage of diode and the junction temperature is used to evaluate the die bonding reliability of high power semiconductor devices

YUAN Weigang; ZHAO Chengxian; MU Yunhua; FAN Qingqing; DENG Tao; ZHENG Jincan

doi:10.3969/j.issn.1672-0172.2015.11.016

Home>Articles>Using the relationship forward voltage of diode and the junction temperature is used to evaluate the die bonding reliability of high power semiconductor devices

DOI: 10.3969/j.issn.1672-0172.2015.11.016

Using the relationship forward voltage of diode and the junction temperature is used to evaluate the die bonding reliability of high power semiconductor devices

YUAN Weigang

ZHAO Chengxian

MU Yunhua

FAN Qingqing

DENG Tao

ZHENG Jincan

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Publication Date：2015-01-01

Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)

Pages：4( 50-53 )

China Appliance Technology

ISSN：1672-0172

Year, Vol.(Issue)：2015,(11)