Test study on ultrasonic wire saw cutting of reaction bonded silicon carbide
SONG Hongxia
ZENG Guowei
CHAO Shenghao
GUO Xiaoguang
DONG Zhigang
WANG Yidan
Abstract:Reaction bonded silicon carbide(RB-SiC)is widely used for manufacturing core components in nuclear energy and optics due to its excellent thermal stability,radiation resistance and chemical inertness.However,RB-SiC is highly hard and brittle,making it difficult to ensure processing quality and efficiency with traditional methods.Ultrasonic diamond wire saw cutting technology,as an efficient machining method for hard brittle materials,has been successfully applied in the processing of single crystal Si,single crystal SiC,and other hard brittle materials.However,the cutting test and process research of this technology in RB-SiC materials need to be carried out.To this end,the ultrasonic sawing test of RB-SiC was carried out for the first time.The ultrasonic wire saw cutting RB-SiC platform was built.The surface quality of parallel and vertical ultrasonic vibration directions was compared and analyzed.The effects of ultrasonic amplitude,line speed and feed speed parameters on surface roughness and surface micro-morphology were studied.Results demonstrate ultrasonic sawing has significant advantages in improving surface quality.Increasing the amplitude from 3 μm to 7 μm reduces surface roughness value by 17.4%and decreases the number of surface scratches and pits.Compared to the vertical feed direction,ultrasonic vibration sawing in the parallel feed direction is more effective in improving the surface quality of RB-SiC materials.This study can provide guidance for the research of ultrasonic sawing process of RB-SiC materials.
Keywords:Ultrasonic sawingReaction bonded silicon carbideDiamond wire sawUltrasonic vibrationSurface quality
Publication Date:2025-09-15
Online Publishing Date:2026-09-12(First online date of this platform, not the publication date of the document)
Pages:10( 164-173 )
Journal of Mechanical Strength

Journal of Mechanical Strength

ISTICPKUCSCD
ISSN:1001-9669
Year, Vol.(Issue):2025,47(9)