Simulation of Atmospheric Neutron Radiation Effect in FPGA
ZHAO Peng
MEI Liang
CHANG Cheng
Abstract：In this paper,FPGA atmospheric neutron radiation effect simulation research is studied. Through the analysis of FP?GA,especially SRAM-type FPGA in the space near the operating environment,it can be found that it is susceptible to atmospheric neutron radiation in the adjacent space,then the occurrence of single-particle flip will happen. The main reason for this phenomenon is that the NMOS transistor in the internal memory cell of the SRAM type FPGA is affected by atmospheric neutron radiation,and its drain generates transient current pulse,which affects the function of the whole FPGA. "NMOS Atmospheric Neutron Radiation Effect Study" The TCAD simulation software is used to obtain the drain transient current generated by the NMOS tube drain in different ener?gy neutrons and different sizes of NMOS tubes. Based on the simulation results,the SRAM memory cell circuit analysis is carried out in this oaper and the main influencing factors of FPGA single particle turnover caused by atmospheric neutron radiation are obtained.
Keywords：Key Words FPGASRAMcircuit simulation
Publication Date：2019-01-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：5( 74-78 )