Preparation and Evaluation of Standard Sample of SiO2 Film Thickness
ZHAO Lin
LIANG Faguo
HAN Zhiguo
LI Suoyin
FU Shaohui
Abstract：The paper introduces the application of silicon dioxide film thickness standard sample and the sample preparation, and the layout of the silicon dioxide film thickness sample is designed,the silicon dioxide film thickness on silicon is prepared by thermal oxidation and chemical vapor deposition(PECVD)respectively at 10nm~1000nm thickness. Taking 10nm and 1000nm as an example,the thickness,uniformity and stability of the film are examined. The results show that the quality of the film prepared by thermal oxidation process is superior to that of PECVD process,the film thickness of the film thickness sample is basically the same as the design value,and the stability is good. Compared with the standard film thickness of the same film thickness of Ameri?can VLSI company,the uniformity of silicon dioxide film thick sample produced by thermal oxidation process is consistent with the result of VLSI block evaluation.
Keywords：Key Words film thickness standard samplethermal oxidationplasma enhanced chemical vapor depositionuniformitystability
Publication Date：2019-01-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：5( 5-8,56 )