Research on Pressure Sensor Hermetic Encapsulation Process Based on Nanosilver
ZHANG Xin
WANG Junqiang
CAO Yonghong
Abstract：Nanosilver has a high melting point and good electrical properties after sintering,which is an ideal material for the encapsulation of high-temperature resistant devices.Through process exploration,hot press bonding of nanosilver as sealing rings is successfully realized to form compliant hermetically sealed interconnections.Sealing rings with a width of 400 μm are prepared by a dispensing machine.The optimization of nanosilver hot press bonding process parameters is explored,combined with Ar(5％H2)plasma pretreatment method,and the control variable method is used to investigate the effects of bonding pressure,bonding time,and bonding temperature on the bonding quality of nanosilver,and it is obtained that the shear force and airtightness are positively correlated with the bonding pressure,temperature,and time,so as to obtain the bonding parameters suitable for the high-tempera-ture pressure sensors of graphene.The subsequent sensor processing is carried out under the optimal conditions,and the successful-ly bonded samples are tested and characterized,and the bonding interface is relatively flat,with high densities and good airtight-ness.By comparing the electrical characteristics of the chip before and after bonding,the resistance value of graphene is basically unchanged,and this bonding method has high stability.A new method is provided for the low-cost,fast efficiency and high-strength hermetic packaging of graphene MEMS pressure sensors.
Keywords：graphenenanosilver bondinghermetic packaging
Publication Date：2025-12-20
Online Publishing Date：2026-03-23(First online date of this platform, not the publication date of the document)
Pages：6( 225-230 )