Research on the Influence of High Input Power Stress on the Characteristics of GaN Chips
HAN Tao
WANG Ning
REN Xiang
CHANG Cheng
LU Tao
YIN Pengyi
SUN Jiachuan
Abstract：The quality and reliability of GaN devices has become a problem of more and more users,and this paper simulates the high input power application scenario of the device,monitors the degradation of GaN devices during the test process,and sum-marizes the degradation mechanism through the analysis of the test results.
Keywords：high input powerGaN devicesdegradation
Publication Date：2025-11-20
Online Publishing Date：2026-01-28(First online date of this platform, not the publication date of the document)
Pages：4( 162-164,184 )