Influence of infrared nanosecond laser parameters on the ablative cutting quality of silicon wafers in single-pass scanning
WANG Rui
WU Haiwen
HE Junshan
CHEN Guojie
Abstract：In this work,1064 nm infrared nanosecond laser is used to perform a single-pass scanning ablation cutting experiment on<111>silicon wafers.The effects of laser pulse repetition rate and scanning speed on the morphology of silicon wafer surface and fracture surface,ablative zone width,heat affected zone width and cutting depth were investigated.The results show that repetition frequency and scanning speed have an important effect on the ablation cutting quality of a single-pass scanning.Optimizing the repetition frequency and scanning speed can improve the cutting efficiency,and obtain the cutting effect with small ablation zone and heat affected zone width and smooth fracture surface.
Keywords：nanosecond lasersilicon waferssingle-pass scanningheat affected zone
Publication Date：2025-03-31
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：6( 55-60 )