A simple structure memristor simulation circuit working at high frequency
ZHANG Xin
YU Xinmei
Abstract：In this paper,a high-frequency memristor circuit based on a pseudo-differential structure is proposed.The memristor circuit has a nonlinear voltage-current relationship.The circuit proposed in this paper is based on a pseudo-differential structure,and the high-frequency nonlinear V-I characteristics can be realized by a simple five-tube op-amp combined with a negative-impedance converter.The circuit is designed and realized by CMOS 180 nm process,and the layout area is only 0.000 183 mm2.The simulation results showed that the operating frequency of the memristor circuit can reach 300 MHz under the supply voltage of 3.3 V,and the combination of Tsai's circuit could produce excellent chaotic effect.The high-frequency memristor circuit based on pseudo-differential structure proposed in this paper had the advantages of simple structure,low power consumption,high operating frequency,small area and easy integration,which can be widely used in information security chips.
Keywords：memristor circuitnegative impedance converter transistorhigh frequencypseudo differential amplifier
Publication Date：2024-11-30
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：9( 46-54 )