Effect of oxygen partial pressure and substrate temperature on properties of Al-Doped ZnO thin films of transparent conductor
PENG Guang-Huai
LI Jin-Qiong
WEN He-Rui
LIAO Jin-Sheng
HONG Rui-Jin
Abstract：It was studied that the effect of oxygen partial pressure and substrate temperature on properties of aluminum-doped ZnO thin films of transparent conductor.A series of aluminum-doped zinc oxide(ZAO)thin films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering.T he structures,electrical and optical properties of the thin films deposited under different oxygen partial pressure and sub-strate temperature were investigated.X-ray diffraction(XRD)patterns showed that the nature of the thin films was polycrystalline with a hexagonal structure stacked along the c-axis.The results showed that the optimum deposition conditions in our experiments were Ar/O2flow ratio of 100:5 and substrate temperature of 400 ℃ with a sheet resistance of 80 Ω/sq and an average transmittance of 80% in the visible range.
Keywords：Aluminum-doped zinc oxide thin filmMagnetron sputteringOxygen partial pressureDeposition temperatureTransparent conductor
Publication Date：2018-01-01
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：6( 39-44 )