Optimization method for turn-off trajectory of SiC MOSFET active driving circuit
CHEN Yueqing
GUO Xizheng
BU Xucong
HAO Ruixiang
YOU Xiaojie
Abstract：The rapid switching process of SiC MOSFET introduces switching oscillations and Electro-magnetic Interference(EMI)concerns.To address these issues,multi-level active driving circuits offer the capability to optimize the turn-off trajectory of SiC MOSFET by adjusting the driving voltage dur-ing the switching process.In the context of active driving circuit,this work presents a method for opti-mizing the selection of intermediate levels and action timing,specifically focusing on the turn-off tra-jectory of SiC MOSFET.This method relies on an understanding of the turn-off mechanism and an equivalent current slope approach to create a prediction model for SiC MOSFET turn-off trajectory.It further leverages an objective-based optimization approach to determine the ideal action timing and lev-els for intermediate stages in the active driving circuit.The objective is to ensure that SiC MOSFET operates at an optimized compromise point,balancing turn-off voltage peak and turn-off loss.The re-search results indicate that the combination of the SiC MOSFET turn-off trajectory prediction model and the proposed optimization method effectively predicts and enhances the turn-off trajectory of SiC MOSFET.Notably,the model exhibits a maximum error of less than 10%,validating its accuracy and applicability under various gate resistances.
Keywords：SiC MOSFETswitching characteristicsactive drivingtrajectory prediction model
Publication Date：2023-10-28
Online Publishing Date：2025-08-15(First online date of this platform, not the publication date of the document)
Pages：10( 126-135 )